技术特性
- 33 dBm midband Pout
- 32 dB nominal gain
- 10 dB typical return loss
- Built-in directional power detector with reference
- 0. 50 um pHEMT technology
- Bias conditions: 7 V, 680 mA
- Chip dimensions: 2.5 x 1.4 x 0.1 mm (98 x 55 x 4 mils)
应用领域 APPLICATION
- Electronic Counter-Countermeasures (ECCM)
- X and Ku Band Point-to-Point Radio
订购信息 Ordering Information
|
技术指标
频率(GHz) |
功率(dBm) |
增益(dB) |
NF/PAE |
+V |
IQ(mA) |
13 -17 |
33 |
32 |
- |
7 |
680 |
机械图样Mechanical Drawing
|