TGF4250-SCC 4.8 mm HFET
The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain and 53% PAE. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4250-SCC is readily assembled using automatic equipment.
技术特性
- Nominal Pout of 34 dBm at 8.5 GHz
- Nominal gain of 8.5 dB at 8.5 GHz
- Nominal PAE of 53% at 8.5 GHz
- Suitable for high reliability applications
- 4800 um x 0.5 um FET
- Bias at 8 V, 384 mA
- Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in)
技术指标
| 频率(GHz) |
增益(dB) |
功率(dBm) |
NF/PAE |
Vd(V) |
IQ(mA) |
| DC - 10.5 |
8.5 |
34 |
53% |
8 |
384 |
订购信息 Ordering Information
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应用领域 APPLICATION
- Cellular Base Stations
- High Reliability Space
- Military
机械图样Mechanical Drawin
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