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DRAM 动态随机存储器
SDR SDRAM
DDR SDRAM
Mobile手机 RAM 随机存取存贮器;
Pseudo SRAM (PSRAM)
低功耗 SDR SDRAM
低功耗 DDR SDRAM
Flash存储器
并行Parallel Flash存储器
串行Serial Flash存储器
EPROM可擦可编程只读存储器
Winbond 华邦存储器Mamory SDR SDRAM 动态随机存储器
16M Organization Speed Grade Voltage Package Availability
W981616CH 1Mx16 2 Banks -6/ -7 166 MHz/143 MHz CL3 3.3 V TSOP II 50 (400 mil ) Mass Production
W9816G6CH 1Mx16 2 Banks -6/-7 166 MHz/143 MHz CL3 3.3 V TSOP II 50 (400 mil ), Pb-free Mass Production
W9816G6CB 1Mx16 2 Banks -7 143 MHz CL3 3.3 V TSOP II 50 (400 mil ), Pb-free Mass Production
64M Organization Speed Grade Voltage Package Availability
W986416EH 4Mx16 4 Banks -6/ -7 166 MHz/143 MHz CL3 3.3 V TSOP II 54 (400 mil) Mass Production
W9864G6EH 4Mx16 4 Banks -6/ -7 166 MHz/143 MHz CL3 3.3 V TSOP II 54 (400 mil), Pb-free Mass Production
W986432EH 2Mx32 4 Banks -6 /-7 166 MHz/143 MHz CL3 3.3 V TSOP II 86 (400 mil) Mass Production
W9864G2EH 2Mx32 4 Banks -6/ -7 166 MHz/143 MHz CL3 3.3 V TSOP II 86 (400 mil), Pb-free Mass Production
W9864G6EB 4Mx16 4 Banks -7 143 MHz CL3 3.3 V 60 Ball VFBGA, Pb-free Mass Production
W9864G6GH 4Mx16 4 Banks -6/ -7 166 MHz/143 MHz CL3 3.3 V TSOP II 54 (400 mil), Pb-free Q2/06
W9864G2GH 2Mx32 4 Banks -6/ -7 166 MHz/143 MHz CL3 3.3 V TSOP II 54 (400 mil), Pb-free Q2/06
W9864G6GB 4Mx16 4 Banks -7 143 MHz CL3 3.3 V 60 Ball VFBGA, Pb-free Q3/06
128M Organization Speed Grade Voltage Package Availability
W981216DH 8Mx16 4 Banks -75 133 MHz CL2/CL3 3.3 V TSOP II 54 (400 mil) Mass Production
W9812G6DH 8Mx16 4 Banks -6 -7 -75 166 MHz 143 MHz 133 MHz CL2/CL3 3.3 V TSOP II 54 (400 mil), Pb-free Mass Production
W9812G2DH 4Mx32 4 Banks -6 -7 -75 166 MHz 143 MHz 133 MHz CL2/CL3 3.3 V TSOP II 86 (400 mil), Pb-free Mass Production
W9812G2DB 4Mx32 4 Banks -75 133 MHz CL2/CL3 3.3 V 90 Ball TFBGA, Pb-free Mass Production
W9812G6GH 8Mx16 4 Banks -6 -7 -75 166 MHz 143 MHz 133 MHz CL2/CL3 3.3 V TSOP II 54 (400 mil), Pb-free Q2/06
W9812G2GH 4Mx32 4 Banks -6 -7 -75 166 MHz 143 MHz 133 MHz CL2/CL3 3.3 V TSOP II 86 (400 mil), Pb-free  Q2/06
W9812G2GB 4Mx32 4 Banks -75 133 MHz CL2/CL3 3.3 V 90 Ball TFBGA, Pb-free Q3/06
256M Organization Speed Grade Voltage Package Availability
W982516CH 16Mx16 4 Banks -7 -75 143 MHz 133 MHz CL2/CL3 CL3 3.3 V TSOP II 54 (400 mil) Mass Production
W9825G6CH 16Mx16 4 Banks -7 -75 143 MHz 133 MHz CL2/CL3 CL3 3.3 V TSOP II 54 (400 mil), Pb-free Mass Production
W9825G6CB 16Mx16 4 Banks -75 133 MHz CL3 3.3 V 90 Ball VFBGA, Pb-free Mass Production
W9825G6DH 16Mx16 4 Banks -7 -75 143 MHz 133 MHz CL2/CL3 CL3 3.3 V TSOP II 54 (400 mil), Pb-free Q3/06
W9825G2DB 16Mx16 4 Banks -75 133 MHz CL3 3.3 V 90 Ball VFBGA, Pb-free Q3/06
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Winbond 华邦存储器Mamory DDR SRAM 动态随机存储器
128Mb Organization Speed Grade Voltage Package Availability
W9412G6CH 8Mx16 4 Banks -5 -6 -75 200 MHz 166 MHz 133 MHz CL2/ CL2.5/ CL3 2.5 V TSOP II 66   (400 mil ), Pb-free Q2/06
W9412G2CB 4Mx32 4 Banks -5 -6 -75 200 MHz 166 MHz 133 MHz CL2/ CL2.5/ CL3 2.5 V 144 Balls LFBGA, Pb-free Q3/06
256Mb Organization Speed Grade Voltage Package Availability
W9425G6CH 16Mx16 4 Banks -5 -6 -75 200 MHz 166 MHz 133 MHz CL2/ CL2.5/ CL3 2.5 V TSOP II 66   (400 mil ),Pb-free Q2/06
W9425G6DH 16Mx16 4 Banks -5 -6 -75 200 MHz 166 MHz 133 MHz CL2.5/ CL3 2.5 V TSOP II 66   (400 mil ),Pb-free Q3/06
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Winbond 华邦存储器Mamory Mobile手机 RAM Pseudo SRAM (PSRAM 随机存取存贮器)
32M Part No. Organization Speed Grade Voltage Package Datasheet Revision Availability
W965L6B-GW 2M x 16 65ns Async 3.0V KGD by request M ass P roduction
W965A6C-GW 2M x 16 70ns Async/Page 3.0V KGD by request Q1/06
W965A6D-GW 2M x 16 70ns Async/Page 3.0V KGD by request Q1/06
64M Part No. Organization Speed Grade Voltage Package Datasheet Revision Availability
W966A6B-GW 4 M x 16 83MHZ S ync Burst/Page 3.0V KGD by request M ass P roduction
W966D6B -GW 4 M x 16 77MHZ Sync Burst/Page 1.8 V KGD by request Mass Production
W966A6C-GW 4M x 16 77ns Sync/Page 3.0V KGD by request Q1/06
128M Part No. Organization Speed Grade Voltage Package Datasheet Revision Availability
W967C6A-GW 8M x 16 77MHZ Async/Page/Burst 3.0V KGD by request Mass Production
W967A6AA-GW 8M x 16 70ns Async/Page 3.0V KGD by request Mass Production
W967D6D-GW 8M x 16 133MHZ Async/Page/Burst 1.8V KGD by request Q3/06
256M Part No. Organization Speed Grade Voltage Package Datasheet Revision Availability
W968D6B-GW 16M x 16 133MHZ Async/Page/Burst 1.8V KGD by request Q2/06
W968D2B-GW 8M x 32 133MHZ Async/Page/Burst 1.8V KGD by request Q3/06
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Winbond 华邦存储器Mamory Mobile手机 低功耗 SDR SDRAM存储器
256M Part No. Organization Speed Grade Voltage Package Datasheet Revision Availability
W988D6E-GW 16Mx16 4Banks -75 133 MHz CL3/2 1.8V KGD by request Phase in Q3/06
W988D2E-GW 8Mx32 4Banks -75 133 MHz CL3/2 1.8V KGD by request Phase in Q3/06
W988D2EBG75E 8Mx32 4Banks -75 133 MHz CL3/2 1.8V 8*13 90 Ball BGA,Pb-Free by request Phase in Q3/06
518M Part No. Organization Speed Grade Voltage Package Datasheet Revision Availability
W989D2A-GW 16Mx32 4Banks -75 133 MHz CL3/2 1.8V KGD by request Phase in Q3/06
W989D6A-GW 32Mx16 4Banks -75 133 MHz CL3/2 1.8V KGD by request Phase in Q3/06
W989D6A-GW 64Mx8 4Banks -75 133 MHz CL3/2 1.8V KGD by request Phase in Q3/06
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Winbond 华邦存储器Mamory Mobile手机 低功耗 DDR SDRAM存储器
256M Part No. Organization Speed Grand Voltage Package Datasheet Revision Availability
W948D6E-GW 16Mx16 4Banks -75 133 MHz CL3/2 1.8 V KGD by request Q3/06
512M Part No. Organization Speed Grand Voltage Package Datasheet Revision Availability
W949D6A-GW 32Mx16 4Banks -75 133 MHz CL3/2 1.8 V KGD by request Q3/06
W949D2A-GW 16Mx32 4Banks -75 133 MHz CL3/2 1.8 V KGD by request Q3/06
W949D8A-GW 64Mx8 4Banks -75 133 MHz CL3/2 1.8 V KGD by request Q3/06
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Winbond 华邦存储器Mamory Flash存储器 并行Parallel Flash 闪存器
小容量Flash 容量 电压 结构 封装 技术资料版本 Availability
W29C512A 512K 5V 64K x8 PLCC 32,TSOP 32 A3 2005年4月 M/P
W29EE512 PLCC 32, TSOP 32 Pb-free PLCC 32 A9 2005年4月 M/P
W29C011A 1M 5V 128K X8 DIP 32, SOP 32 PLCC 32 A4 2005年4月 M/P
W29EE011 PLCC 32, TSOP 32 DIP 32 Pb-free PLCC 32 A17 2005年4月 M/P
W29C020C 2M 5V 256K x 8 DIP 32, PLCC 32, TSOP 32 A7 2006年11月 EOL
W29C040 4M 5V 512K x 8 DIP32 PLCC 32, TSOP 32, A10 2005年4月 EOL
W39L512 512K 3.3V 64K x 8 PLCC 32, STSOP 32 A4 2006年9月 M/P
W39F010 1M 5V 128K x 8 DIP 32, PLCC 32, TSOP 32, STSOP 32 A4 2006年1月  M/P
W39L010 128K x 8 PLCC 32, STSOP 32 A5 2005年4月 M/P
W39L040 4M 3.3V 512K x 8 PLCC 32, TSOP 32, STSOP 32 A6 2005年4月  -
W39L040A 3.3V 512K x 8 PLCC 32, STSOP 32 A3 2005年4月 M/P
FWH/LPC 容量 电压 结构 封装 Remark 技术资料版本 Availability
W39V040A* 4M 　 3.3V 512K x 8 PLCC32, STSOP32 LPC A5 2005年4月 M/P
W39V040FA* PLCC 32, STSOP 32 TSOP 40 FWH A5 2005年4月 M/P
W39V040B* PLCC 32, STSOP 32 LPC A3 2005年4月 M/P
W39V040FB* PLCC 32, STSOP 32 FWH A3 2005年4月 M/P
W39V040C* PLCC 32, STSOP 32 LPC A1 2006年4月 Q2/06
W39V040FC* PLCC 32, STSOP 32 FWH A1 2006年4月  Q2/06
W39V080FA 8M　 3.3V 　 1M x 8 PLCC 32, STSOP 32 FWH  A3 2005年4月 M/P
W39V080A PLCC 32, STSOP 32 LPC A3 2006年1月  M/P
高容量Flash 容量 电压 结构 封装 Remark 技术资料版本 Availability
W19B320A 32M 3V 4M x 8/ 2M x 16 TSOP 48, TFBGA 48 Flexible Bank A3 2006年1月 M/P
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Winbond 华邦存储器Mamory 串行 Serial Flash 闪存器
型号 容量 电压 结构 封装 Availability
W25P10 1M 3.0 / 3.3V Uniform 64KB Sectors 512 Pages of 256B/page 8-pin SOIC 150mil M/P
W25X10 1M 3.0 / 3.3V Uniform 4KB Sectors75 MHz, Dual-Output Read 8-pin SOIC 150mil M/P
W25P20 2M 3.0 / 3.3V Uniform 64KB Sectors 1024 Pages of 256B/page 8-pin SOIC 150mil M/P
W25X20 2M 3.0 / 3.3V Uniform 4KB Sectors 75 MHz, Dual-Output Read 8-pin SOIC 150mil M/P
W25P40 4M 3.0 / 3.3V Uniform 64KB Sectors 2048 Pages of 256B/page 8-pin SOIC 150mil M/P
W25X40 4M 3.0 / 3.3V Uniform 4KB Sectors 75 MHz, Dual-Output Read 8-pin SOIC 150mil & 208mil 8-pin DIP 300mil ,WSON 6x5mm M/P
W25B40 4M 3.0 / 3.3V Boot Block 4K to 64KB Sectors 2048 Pages of 256B/page 8-pin SOIC 150mil M/P
W25P80 8M 3.0 / 3.3V Uniform 64KB Sectors 4096 Pages of 256B/page 8-pin SOIC 208mil M/P
W25X80 8M 3.0 / 3.3V Uniform 4KB Sectors 75 MHz, Dual-Output Read 8-pin SOIC 150mil & 208mil 8-pin DIP 300mil ,WSON 6x5mm M/P
W25P16 16M 3.0 / 3.3V Uniform 64KB Sectors 8192 Pages of 256B/page 8-pin SOIC 208mil / 16-pin SOIC 300mil M/P
W25X16 16M 3.0 / 3.3V Uniform 4KB Sectors 75 MHz, Dual-Output Read 8-pin SOIC 208mil / 16-pin SOIC 300mil Q4 2006
W25X32 32M 3.0 / 3.3V Uniform 4KB Sectors 75 MHz, Dual-Output Read 8-pin SOIC 208mil / 16-pin SOIC 300mil Q4 2006
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Winbond 华邦存储器Mamory EPROM 可擦可编程只读存储器
型号 容量 电压 结构 封装 技术资料版本 Availability
W27E512 512K 5V 64K X 8 DIP 28, PLCC 32 A10 2003年12月 M/P
W27C512* DIP 28, PLCC 32 A6 2006年1月 M/P
W27E520 5V/3.3V 64K X 8 SOP 20, TSSOP 20 A2 2000年9月 M/P
W27L520 SOP 20, TSSOP 20 A5 2001年7月 M/P
W27C520 SOP 20, TSSOP 20 A2 2002年5月 M/P
W27E01 1M　 　 5V 128K X 8 DIP 32, PLCC 32, STSOP 32 A1 2002年5月 M/P
W27C01 PLCC 32, STSOP 32, DIP 32 A2 2002年4月 M/P
W27L01　 3.3V 128K X 8 TSOP 32, PLCC 32, STSOP 32 A3 2003年2月 M/P
W27E02 2M 5V 　 256K X 8 DIP 32, PLCC 32, STSOP 32 A1 2002年5月 M/P
W27C02 DIP 32, PLCC 32, STSOP 32 A2 2002年4月 M/P
W27L02 3.3V 256K X 8 PLCC 32, STSOP 32 A3 2003年2月 M/P
W27E040 4M 5V 512K X 8 DIP 32, PLCC 32 A3 2003年12月 M/P
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