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AT28C256F-15SI 256Kbit,并行EEPROMs存储器SOIC-28封装

Density	256K
Organization	32K x 8
Speed	150, 200, 250, 300, ..
Vcc (V)	4.5-5.5
Packages	FLAT PACK 28 LCC 32 PDIP 28 PGA 28 PLCC 32 CERDIP 28 SOIC (300mil) 28 TSOP 28
Pb-Free Packages	PDIP 28 PLCC 32 SOIC (300mil) 28 TSOP 28

256K EEPROM with 64-Byte Page Software Protection

The AT28C256 is a high-performance electrically erasable and programmable readonly memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 200 μA.

The AT28C256 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA Polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. Atmel’s AT28C256 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking.

AT28C256F-15SI 特征

• Fast Read Access Time – 150 ns
• Automatic Page Write Operation
  – Internal Address and Data Latches for 64 Bytes
  – Internal Control Timer
• Fast Write Cycle Times
  – Page Write Cycle Time: 3 ms or 10 ms Maximum
  – 1 to 64-byte Page Write Operation
• Low Power Dissipation
  – 50 mA Active Current
  – 200 μA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
  – Endurance: 104 or 105 Cycles
  – Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Full Military and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option

AT28C256F-15SI 订购型号

tACC (ns)	ICC (mA)		Ordering Code	Package	Operation Range
	Active	Standby
150	50	0.2	AT28C256-15JI AT28C256-15PI AT28C256-15SI AT28C256-15TI	32J 28P6 28S 28T	Industrial (-40° to 85°C)

tACC (ns)	ICC (mA)		Ordering Code	Package	Operation Range
	Active	Standby
150	50	0.2	AT28C256E-15JI AT28C256E-15PI AT28C256E-15SI AT28C256E-15TI	32J 28P6 28S 28T	Industrial (-40° to 85°C)

tACC (ns)	ICC (mA)		Ordering Code	Package	Operation Range
	Active	Standby
150	50	0.2	AT28C256F-15JI AT28C256F-15PI AT28C256F-15SI AT28C256F-15TI	32J 28P6 28S 28T	Industrial (-40° to 85°C)

AT28C256F-15SI 应用技术支持与电子电路设计开发资源下载

1. ATMEL 爱特梅尔EEPROM存储器AT28C256 数据手册DataSheet 下载. PDF（完整版）
2. 并行EEPROM 存储器参数选型指南（Excel 文档格式）
3. EEPROM 存储器参数选型指南
4. 中文版 ATMEL 汽车应用解决方案 . pdf
5. 英文版 ATMEL 汽车应用解决方案 . pdf
6. 嵌入式系统中EEPROM文件系统的设计与实现 . PDF
7. ATMEL 爱特梅尔公司全线产品目录. pdf