首页 > ATMEL 爱特梅尔 > EEPROM 存储器

AT28HC256 256Kbit,并行EEPROMs存储器

Density	256K
Organization	32K x 8
Speed	70, 90, 120 ns
Vcc (V)	4.5-5.5
Packages	FLAT PACK 28 LCC 32 PDIP 28 PGA 28 PLCC 32 CERDIP 28 SOIC (300mil) 28 TSOP 28
Pb-Free Packages	PLCC 32 SOIC (300mil) 28 TSOP 28

256K EEPROM with 64-Byte Page Software Protection

The AT28HC256 is a high-performance electrically erasable and programmable readonly memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of just 440 mW. When the AT28HC256 is deselected, the standby current is less than 5 mA.

The AT28HC256 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the address and 1 to 64 bytes of data are internally latched, freeing the addresses and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA Polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. Atmel’s 28HC256 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking.

AT28HC256 特征

• Fast Read Access Time – 70 ns
• Automatic Page Write Operation
  – Internal Address and Data Latches for 64 Bytes
  – Internal Control Timer
• Fast Write Cycle Times
  – Page Write Cycle Time: 3 ms or 10 ms Maximum
  – 1 to 64-byte Page Write Operation
• Low Power Dissipation
  – 80 mA Active Current
  – 3 mA Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
  – Endurance: 104 or 105 Cycles
  – Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Full Military and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option

AT28HC256 订购型号

tACC (ns)	ICC (mA)		Ordering Code	Package	Operation Range
	Active	Standby
70	80	0.3	AT28HC256-70JU	32J	Industrial (-40° to 85°C)
			AT28HC256-70SU	28S
			AT28HC256-70TU	28T
90	80	0.3	AT28HC256-90JU	32J
			AT28HC256E-90JU
			AT28HC256F-90JU
			AT28HC256-90SU	28S
			AT28HC256E-90SU
			AT28HC256F-90SU
			AT28HC256-90TU	28T
			AT28HC256E-90TU
			AT28HC256F-90TU
120	80	0.3	AT28HC256-12JU	32J
			AT28HC256E-12JU
			AT28HC256F-12JU
			AT28HC256-12SU	28S
			AT28HC256E-12SU
			AT28HC256F-12SU
			AT28HC256-12TU	28T
			AT28HC256E-12TU
			AT28HC256F-12TU

AT28BHC256 应用技术支持与电子电路设计开发资源下载

1. ATMEL 爱特梅尔EEPROM存储器AT28HC256 数据手册DataSheet 下载. PDF（完整版）
2. 并行EEPROM 存储器参数选型指南（Excel 文档格式）
3. EEPROM 存储器参数选型指南
4. 中文版 ATMEL 汽车应用解决方案 . pdf
5. 英文版 ATMEL 汽车应用解决方案 . pdf
6. 嵌入式系统中EEPROM文件系统的设计与实现 . PDF
7. ATMEL 爱特梅尔公司全线产品目录. pdf