AT29BV010A 1Mbit,Flash存储器
| Density | 1M |
| Organization | 128K x 8 |
| Speed | 120, 150 ns |
| Vcc (V) | 2.7-3.6 |
| Pb-Free Packages | TSOP 32 PLCC 32 |
1M bit (128k x 8), 2.7-Volt Read and 2.7-Volt Write Flash
The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times to 120 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 50 μA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s Low Voltage Flash family of products. To allow for simple in-system reprogrammability, the AT29BV010A does not require high input voltages for programming. The device can be operated with a single 2.7V to 3.6V supply. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29BV010A is performed on a sector basis; 128 bytes of data are loaded into the device and then simultaneously programmed. During a reprogram cycle, the address locations and 128 bytes of data are captured at microprocessor speed and internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle has been detected, a new access for a read or program can begin.
AT29BV010A 特性
- Single Supply Voltage, Range 2.7V to 3.6V
- Single Supply for Read and Write
- Software Protected Programming
- Fast Read Access Time – 120 ns
- Low Power Dissipation
–15 mA Active Current
–50 μA CMOS Standby Current - Sector Program Operation
–Single Cycle Reprogram (Erase and Program)
–1024 Sectors (128 Bytes/Sector)
–Internal Address and Data Latches for 128 Bytes - Two 8K Bytes Boot Blocks with Lockout
- Fast Sector Program Cycle Time – 20 ms Max
- Internal Program Control and Timer
- DATA Polling for End of Program Detection
- Typical Endurance > 10,000 Cycles
- CMOS and TTL Compatible Inputs and Outputs
- Green (Pb/Halide-free) Packaging Option
AT29BV010A 订购型号
| tACC (ns) |
ICC (mA) | Ordering Code | Package | Operation Range | |
| Active | Standby | ||||
| 120 | 15 | 0.05 | AT29BV010A-12JU AT29BV010A-12TU |
32J 32T |
Industrial (-40° to 85° C) |
| 150 | 15 | 0.05 | AT29BV010A-15JU AT29BV010A-15TU |
32J 32T |
|
AT29BV010A 应用技术支持与电子电路设计开发资源下载
- ATMEL 爱特梅尔Flash 存储器AT29BV010A 数据手册DataSheet 下载. PDF（PDF 文件格式完整版）
- 并行Flash 产品选型指南（
Excel 文档格式） - ATMEL 爱特梅尔公司全线产品目录. pdf
- AT29BV010A IBIS Model (Other, 8 pages, updated 5/04) . pdf
- AT29 Series Software Chip Erase (4 pages, updated 10/98) . pdf
This Application Note describes Software Chip Erase for the AT29 Series Flash family. - Atmel AT29 Flash Memories (8 pages, updated 10/98) . pdf
This Application Note describes Atmel's AT29 Flash Memories. - Programming Atmel's AT29 Flash Family (12 pages, updated 10/98). pdf
This Application Note describes the design benefits of Atmel's AT29 Flash architecture as well as how the device ID feature is used to adjust for varying densities and supply voltages.
