AT49BV040B 4Mbit,Flash存储器
| Density | 4M |
| Organization | 512K x 8 |
| Speed | 70 ns |
| Vcc (V) | 2.7-3.6 |
| Pb-Free Packages |
TSOP 32 VSOP 32 PLCC 32 |
4M (512k x 8), 2.7V - 3.6V or 4.5V - 5.5V Read and Write Flash, Bottom Boot.
The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC = 2.7V to 3.6V) and an access time of 55 ns (VCC = 4.5V to 5.5V). The power dissipation over the industrial temperature range with VCC = 2.7V to 3.6V is 72 mW and is 110 mW with VCC = 4.5V to 5.5V. When the device is deselected, the CMOS standby current is less than 30 μA. To allow for simple in-system reprogrammability, the AT49BV040B does not require high input voltages for programming. Reading data out of the device is similar to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus contention. Reprogramming the AT49BV040B is performed by erasing a sector of data and then programming on a byte by byte basis. The byte programming time is a fast 10 μs. The end of a program or erase cycle can be optionally detected by the DATA polling or toggle bit feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 100,000 cycles. The device is erased by executing a chip erase or a sector erase command sequence; the device internally controls the erase operations. The memory array of the AT49BV040B is organized into two 8K byte parameter sectors, eight main memory sectors, and one boot sector. The device has the capability to protect the data in the boot sector; this feature is enabled by a command sequence. The 16K-byte boot sector includes a reprogramming lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is permanently protected from being reprogrammed.
AT49BV040B 特性
- Single Supply for Read and Write: 2.7V to 5.5V
- Fast Read Access Time – 70 ns (VCC = 2.7V to 3.6V); 55 ns (VCC = 4.5V to 5.5V)
- Internal Program Control and Timer
- Flexible Sector Architecture
– One 16K Bytes Boot Sector with Programming Lockout
– Two 8K Bytes Parameter Sectors
– Eight Main Memory Sectors (One 32K Bytes, Seven 64K Bytes) - Fast Erase Cycle Time – 8 Seconds
- Byte-by-Byte Programming – 10 μs/Byte Typical
- Hardware Data Protection
- DATA Polling or Toggle Bit for End of Program Detection
- Low Power Dissipation
– 20 mA Active Current
– 25 μA CMOS Standby Current for VCC = 2.7V to 3.6V
– 30 μA CMOS Standby Current for VCC = 4.5V to 5.5V - Minimum 100,000 Write Cycles
AT49BV040B 订购型号
| ICC(mA)Active | Ordering Code | Package | Operation Range |
| 20 | AT49BV040B-JU AT49BV040B-TU AT49BV040B-VU |
32J 32T 32V |
Industrial (-40° to 85° C) |
AT49BV040B 应用技术支持与电子电路设计开发资源下载
- ATMEL 爱特梅尔Flash 存储器AT49BV040B 数据手册DataSheet 下载. PDF（PDF 文件格式完整版）
- 并行Flash 产品选型指南（
Excel 文档格式） - ATMEL 爱特梅尔公司全线产品目录. pdf
