AF15N50:N 通道 31V - 99V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)IDS @TC = +25°C (A)PD @TA = +25°C (W)PD @TC = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)RDS(ON)Max @ VGS(1.8V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 5V(nC)QG Typ @ VGS = 4.5V(nC)
AF15N50AF15N50.pdf-YesNoNNo501215-31-2030--2--15.2--
Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON), fast switching speed and body diode reverse recovery performance.

Application
  • Primary Switch in Isolated DC-DC
  • Synchronous Rectifier
  • Load Switch
U-DFN5060-8
AF15N50.pdf AF15N50