DFBR030U3LP：MOSFET 带 SBR
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Config/ Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON) Max @ VGS (10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | VGS (th) Max (V) | RDS(ON)Max @ VGS(1.8V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | CTotalTyp | CISS Typ @VDS = -10V (pF) | V(BR)R (V) Min @IR=400uA | QG Typ (nC) @ VGS = 4.5V | VF(V) Max @ IF=100mA | VF(V) Max @ IF=1A | VF(V) Max @ IF=2A | IR(uA) Max @ VR=5V | IR(uA) Max @ VR=30V | Vfd2(V) Max @ VLL=+5V, IOUT = 2A | Ileak(uA) Max @ VLL= 16V, no load. | Ileak(uA) Max @ VLL= 0V, VOUT = 5V. |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DFBR030U3LP | DFBR030U3LP.pdf | - | No | No | Dual 30V N + Dual 30A SBR | Yes | 30 | 20 | 3.2 | 0.5 | 26 | - | 2.2 | - | - | 1000 | - | 30 | - | 0.278 | 0.37 | 0.42 | 150 | 400 | 0.56 | 1000 | 1000 |
Description
Dual 30V N-Channel MOSFETs with Dual 3.0A Super Barrier Rectifier Diodes together packaged in a 4.0 x 4.0 x 0.6 mm DFN Package
Application
Wireless Charging, AC-DC Rectification, Optimized for Power Management Applications for Portable Products.
Features
1. For two N-channel MOSFET transistors:
Drain-Source Breakdown Voltage: 30V
Maximum Drain Current: 3.2A
2. For two Super Barrier Rectifier Diodes:
Forward Voltage Drop VF less than 0.42V
Maximum leakage current IR is less than 400 uA at 25 oC
3. For the Rectifier as a whole:
Rectifier Forward Voltage is less than 0.56V.
Rectifier leakage and reverse leakage current are less than 1
mA.
订购型号
- DFBR030U3LP-13
U-DFN4040-8
- DFBR030U3LP.pdf DFBR030U3LP
