DMC1016UPD：8V - 29V 互补
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ @ VGS = 4.5V(nC) | QG Typ@ VGS = 10V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMC1016UPD | DMC1016UPD.pdf | DMC1016UPD | Yes | No | N P | No Yes | 12 20 | 8 | 8.7 9.5 | 2.3 | - | 17 20 | 25 | - 40 | 0.35 0.6 | 1 1.5 | 1454 3103 | 15 6 | 18 32 | - |
Description
This new generation Complementary Pair Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Application
- Notebook Battery Power Management
- DC-DC Converters
- Load Switch
Features
- Thermally Efficient Package – Cooler Running Applications
- High Conversion Efficiency
- Low RDS(ON) – Minimizes On-State Losses
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate for Q2 P-Channel
订购型号
- DMC1016UPD-13
PowerDI5060-8 (Type C)
.jpg "PowerDI5060-8 (Type C)")
- DMC1016UPD.pdf DMC1016UPD
