DMG1029SV:31V - 100V 互补

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)PD @TA = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)CISS Typ (pF)CISS Condition15VVGS (th) Max (V)QG Typ@ VGS = 10V(nC)
DMG1029SVDMG1029SV.pdfDMG1029SVYesYesN PNo60200.32 0.480.661700 40003000 600020 3002.5 3.0-
Description

This new generation 60V N+P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application

Application
  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch
订购型号
  • DMG1029SV-7
  • DMG1029SVQ-7
SOT563
DMG1029SV.pdf DMG1029SV
SBR1U30SV SBR1U30SV
SBR1U30SV SBR1U30SV