DMG2307L：P Channel 30V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ @ VGS = 4.5V(nC) | QG Typ@ VGS = 10V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMG2307L | DMG2307L.pdf | DMG2307L | Yes | Yes | P | No | 30 | 20 | 3.2 | 0.76 | 90 | 130 | - | 3 | - | - | 4 | 8.2 |
Description
This new generation 30V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.
Application
- General Purpose Interfacing Switch
- Power Management Functions
- Load Switch for Portable Devices
订购型号
- DMG2307L-7
SOT23
- DMG2307L.pdf DMG2307L
