DMG3407SSN:P Channel 30V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)PD @TA = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ @ VGS = 4.5V(nC)QG Typ@ VGS = 10V(nC)
DMG3407SSNDMG3407SSN.pdf-YesYesPNo30204.60.785072-2.5--76114
Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application
  • Backlighting
  • DC-DC Converters
  • Power management functions
订购型号
  • DMG3407SSN-7
SC59
DMG3407SSN.pdf DMG3407SSN
SDM20E40C dual surface mount schottky barrier diode SDM20E40C
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