DMG4511SK4：31V - 100V 互补
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | CISS Typ (pF) | CISS Condition15V | VGS (th) Max (V) | QG Typ@ VGS = 10V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMG4511SK4 | DMG4511SK4.pdf | DMG4511SK4 | Yes | Yes | N P | No | 20 | 35 | 7.8 8.6 | 1.54 | 35 45 | 65 | 850 985 | - | 3.0 | 18.7 19.2 |
Description
This new generation 35V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to DC FAN , Battery packing and Inverter and other power management functions.
Application
- Backlighting
- DC-DC Converters
- Power management functions
订购型号
- DMG4511SK4-13
TO252-4
- DMG4511SK4.pdf DMG4511SK4
