DMG6601LVT:30V 互补

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityVDS (V)VGS (±V)IDS @TA = +25°C (A)PD @TA = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ @ VGS = 4.5V(nC)QG Typ@ VGS = 10V(nC)
DMG6601LVTDMG6601LVT.pdfDMG6601LVTYesYesN P30122.3 3.40.85115 60150 703.00-5.4 6.512.3 13.8
Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application
  • Backlighting
  • Power Management Functions
  • DC-DC Converters
订购型号
  • DMG6601LVT-7
TSOT26
DMG6601LVT.pdf DMG6601LVT