DMG6602SVT：30V 互补
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ @ VGS = 4.5V(nC) | QG Typ@ VGS = 10V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMG6602SVT | DMG6602SVT.pdf | DMG6602SVT | Yes | Yes | N P | 30 | 20 | 2.8 3.4 | 1.112 | 60 95 | 100 140 | 3.0 | 0 | - | 6 | 13 9 |
Description
This new generation 30V N +P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.
Application
- Backlighting
- DC-DC Converters
- Power management functions
订购型号
- DMG6602SVT-7
- DMG6602SVTQ-7
TSOT26
- DMG6602SVT.pdf DMG6602SVT
