DMG9N65CTI：N 通道 ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMG9N65CTI | DMG9N65CTI.pdf | - | Yes | No | N | No | 650 | 30 | 9 | - | 165 | - | 1300 | - | - | 5 | 0 | 0 | 39 | - |
Description
DIODES has been fabricated using an advanced high voltage MOSFET process , This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Application
- Motor control
- Backlighting
- DC-DC Converters
- Power management functions
订购型号
- DMG9N65CTI
ITO220AB
- DMG9N65CTI.pdf DMG9N65CTI
