DMJ70H1D3SH3:N 通道 ≥100V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)IDS @TC = +25°C (A)PD @TA = +25°C (W)PD @TC = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)
DMJ70H1D3SH3DMJ70H1D3SH3.pdfDMJ70H1D3SH3NoNoNNo700304.6-41-1.3--43515013.9-
Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application
  • AC-DC Converters
  • Backlighting
Features
  • Low RDS(ON) – Ensures On-State Losses are Minimized
  • Advanced Technology for AC/DC Converters
订购型号
  • DMJ70H1D3SH3
TO251
DMJ70H1D3SH3.pdf DMJ70H1D3SH3