DMJ70H1D3SI3：N 通道 ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMJ70H1D3SI3 | DMJ70H1D3SI3.pdf | DMJ70H1D3SI3 | No | No | N | No | 700 | 30 | 4.6 | - | 41 | - | 1.3 | - | - | 4 | 351 | 50 | 13.9 | - |
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- AC-DC Converters
- Backlighting
Features
- Low RDS(ON) – Ensures On-State Losses Are Minimized
- Advanced Technology for AC-DC Converters
订购型号
- DMJ70H1D3SI3
TO251
- DMJ70H1D3SI3.pdf DMJ70H1D3SI3
