DMN10H099SK3：N 通道 ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN10H099SK3 | DMN10H099SK3.pdf | - | Yes | Yes | N | No | 100 | 20 | 17 | - | 0 | - | 80 | 99 @ 6V | - | 3 | 1172 | 0 | 25.2 | - |
Description
This new generation complementary MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Application
- Power Management Functions
- DC-DC Converters
订购型号
- DMN10H099SK3-13
TO252 (DPAK)
- DMN10H099SK3.pdf DMN10H099SK3
