DMN10H120SE:N 通道 ≥100V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)IDS @TC = +25°C (A)PD @TA = +25°C (W)PD @TC = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)
DMN10H120SEDMN10H120SE.pdf-YesYesNNo100203.6-2.1-110122-35495010-
Description

This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.

Application
  • DC-DC Converters
  • Power Management Functions
Features
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
订购型号
  • DMN10H120SE-13
SOT223
DMN10H120SE.pdf DMN10H120SE