DMN10H170SFDE:N 通道 ≥100V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)IDS @TC = +25°C (A)PD @TA = +25°C (W)PD @TC = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)
DMN10H170SFDEDMN10H170SFDE.pdf-YesYesNNo100202.9-2-160200-31167259.7-
Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Application
  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Features
  • 0.6mm Profile – Ideal for Low Profile Applications
  • PCB Footprint of 4mm2
  • Low On-Resistance
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
订购型号
  • DMN10H170SFDE-7
U-DFN2020-6
DMN10H170SFDE.pdf DMN10H170SFDE