DMN10H170SK3：N 通道 ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN10H170SK3 | DMN10H170SK3.pdf | - | Yes | Yes | N | No | 100 | 20 | 12 | - | 42 | - | 140 | 160 | - | 3 | 0 | 0 | 9.7 | - |
Description
This new generation 100V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to DC/DC power management and Motherboard / Servers application
Application
- DC-DC Converters
- Power Management Functions
- Analog Switch
订购型号
- DMN10H170SK3-13
TO252 (DPAK)
- DMN10H170SK3.pdf DMN10H170SK3
