DMN10H220LE：N 通道 ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN10H220LE | DMN10H220LE.pdf | - | Yes | Yes | N | No | 100 | 20 | 3 | - | 1.8 | - | 220 | 250 | - | 2.5 | 401 | 0 | 8.3 | - |
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- DC-DC Converters
- Power Management Functions
订购型号
- DMN10H220LE-13
SOT223
- DMN10H220LE.pdf DMN10H220LE
