DMN10H700S：N 通道 ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN10H700S | DMN10H700S.pdf | DMN10H700S | Yes | No | N | No | 100 | 20 | 0.7 | - | 0.4 | - | 700 | - | - | 4 | 235 | 50 | 4.6 | - |
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems and Solid-State Relays
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Features
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Small Surface Mount Package
- Qualified to AEC-Q101 Standards for High Reliability
订购型号
- DMN10H700S-7
SOT23
- DMN10H700S.pdf DMN10H700S
