DMN1250UFEL：N 通道 8V - 29V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN1250UFEL | DMN1250UFEL.pdf | DMN1250UFEL | - | No | N | No | 12 | 8 | 2 | 1.25 | - | 450 | 550 | - | - | 1 | 146 | 6 | - | 1.3 |
Description
This new generation Mix-MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- Loadswitch
- Smartphones
Features
- Low Gate Charge
- RDS(ON): 350mΩ @ VGS = 4.5V(Single MOSFET)
- 8 N-Channel MOSFET in 1 Device
- Common Source
- Small Footprint 1.5mm × 1.5mm
订购型号
- DMN1250UFEL-7
U-QFN1515-12
- DMN1250UFEL.pdf DMN1250UFEL
