DMN15H310SK3：N 通道 ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN15H310SK3 | DMN15H310SK3 | DMN15H310SK3 | Yes | No | N | No | 150 | 20 | - | 8.3 | - | 32 | 310 | - | - | 3 | 405 | 25 | 8.7 | - |
Description
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Application
- Power Management Functions
- LED Backlight
Features
- Low RDS(ON) – Ensures On-State Losses Are Minimized
- Small Form Factor Thermally Efficient Package Enables Higher Density End Products
- Lead-Free Finish; RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
TO252 (DPAK)
