DMN2008LFU：N 通道 8V - 29V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN2008LFU | DMN2008LFU.pdf | DMN2008LFU | No | No | N+N | Yes | 20 | 12 | 14.5 | 1.7 | - | 5.4 | 9.6 | - | 0.5 | 1.5 | 1418 | 10 | 42.3 | 18.7 |
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- Power Management Functions
- Battery Pack
- Load Switch
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
订购型号
- DMN2008LFU-7
U-DFN2030-6 (Type B)
.jpg "U-DFN2030-6 (Type B)")
- DMN2008LFU.pdf DMN2008LFU
