DMN2010UDZ：N 通道 8V - 29V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN2010UDZ | DMN2010UDZ.pdf | DMN2010UDZ | No | No | N | Yes | 24 | 8 | 10 | 1.6 | - | 7 | 10.5 | - | - | 1 | 2655 | 24 | - | 33 |
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- Power Management Functions
- Battery Pack
- Load Switch
- Smartphones
- Chargers
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
订购型号
- DMN2010UDZ-7
U-DFN2535-6 (Type B)
.jpg "U-DFN2535-6 (Type B)")
- DMN2010UDZ.pdf DMN2010UDZ
