DMN2011UFDE:N 通道 8V - 29V
Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
---|
DMN2011UFDE | DMN2011UFDE.pdf | DMN2011UFDE | Yes | Yes | N | Yes | 20 | 12 | 11.7 | 1.97 | - | 9.5 | 11 | 20 | 0.4 | 1 | 2248 | - | - | 24 |
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- General Purpose Interfacing Switch
- Power Management Functions
订购型号
- DMN2011UFDE-13
- DMN2011UFDE-7
U-DFN2020-6 (Type E)
![U-DFN2020-6 (Type E)](/image/diodes/8325671.gif)