DMN2011UFDF：N 通道 8V - 29V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN2011UFDF | DMN2011UFDF.pdf | DMN2011UFDF | Yes | No | N | Yes | 20 | 12 | 11.7 | 2.1 | - | 9.5 | 11 | 20 | 0.4 | 1 | 2248 | 10 | 56 | 24 |
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- General Purpose Interfacing Switch
- Power Management Functions
Features
- 0.6mm Profile – Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low Gate Threshold Voltage
- Low On-Resistance
- ESD Protected Gate
U-DFN2020-6 (Type F)
- DMN2011UFDF.pdf DMN2011UFDF
