DMN2013UFDE:N 通道 8V - 29V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)PD @TA = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)RDS(ON)Max @ VGS(1.8V) (mΩ)VGS(th) Min.(V)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)
DMN2013UFDEDMN2013UFDE.pdfDMN2013UFDEYesYesNYes20810.50.66-1113-0.51.12453-3214.3
Description

This new generation 20V N Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.

Application
  • General Purpose Interfacing Switch
  • Power Management Functions
订购型号
  • DMN2013UFDE-7
U-DFN2020-6 (Type E)
DMN2013UFDE.pdf DMN2013UFDE
DMP2066UFDE 20v p-channel enhancement mode mosfet DMP2066UFDE