DMN2013UFDE：N 通道 8V - 29V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN2013UFDE | DMN2013UFDE.pdf | DMN2013UFDE | Yes | Yes | N | Yes | 20 | 8 | 10.5 | 0.66 | - | 11 | 13 | - | 0.5 | 1.1 | 2453 | - | 32 | 14.3 |
Description
This new generation 20V N Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.
Application
- General Purpose Interfacing Switch
- Power Management Functions
订购型号
- DMN2013UFDE-7
U-DFN2020-6 (Type E)
- DMN2013UFDE.pdf DMN2013UFDE
