DMN2022UNS:N 通道 8V - 29V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)PD @TA = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)RDS(ON)Max @ VGS(1.8V) (mΩ)VGS(th) Min.(V)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)
DMN2022UNSDMN2022UNS.pdfDMN2022UNSNoNoN+NYes201010.71.2-10.814.517-11870--20.3
Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application
  • Battery Charge Protection
  • Loadswitch
Features
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Complementary Pair MOSFET
  • ESD Protected Up to 2kV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
PowerDI3333-8 (Type UXB)
DMN2022UNS.pdf DMN2022UNS