DMN2027USS:N 通道 8V - 29V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)PD @TA = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)RDS(ON)Max @ VGS(1.8V) (mΩ)VGS(th) Min.(V)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)
DMN2027USSDMN2027USS.pdf-YesYesNNo20-10.51.5-12.5--0.71.31000--11.6
Description

This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to backlight, motor control and other power management functions.

Application
  • Backlightring
  • Motor control
  • DCDC Conversion
SO-8
DMN2027USS.pdf DMN2027USS