DMN2250UFB：N 通道 8V - 29V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN2250UFB | DMN2250UFB.pdf | - | Yes | Yes | N | Yes | 20 | 8 | - | 0.5 | - | 170 | 230 | 250 | 0.35 | 1 | 100 | - | 3.1 | 1.4 |
Description
This new generation 20V N channel enhancement mode MOSFET and Low profile has been designed to minimise RDS(ON) and yet maintain superior switching performance. This device is ideally suited to Handheld application
Application
- DC-DC Converters
- Power Management Functions
订购型号
- DMN2250UFB-7B
X1-DFN1006-3
- DMN2250UFB.pdf DMN2250UFB
