DMN3008SFGQ：N 通道 30V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) | QG Typ @ VGS = 5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN3008SFGQ | DMN3008SFGQ.pdf | DMN3008SFGQ | Yes | Yes | N | No | 30 | 20 | 17.6 | 62 | 2.1 | - | 4.4 | 5.5 | - | - | 2.3 | 3690 | 10 | 86 | 41 | - |
Description
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.
Application
- Backlighting
- Power Management Functions
- DC-DC Converters
Features
- Low RDS(ON) – Ensures on-state losses are minimized
- Small, form factor thermally efficient package enables higher density end products
- Occupies only 33% of the board area occupied by SO-8 enabling smaller end products
- 100% Unclamped Inductive Switch (UIS) test in production
PowerDI3333-8
- DMN3008SFGQ.pdf DMN3008SFGQ
