DMN3016LFDE:N 通道 30V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)IDS @TC = +25°C (A)PD @TA = +25°C (W)PD @TC = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)RDS(ON)Max @ VGS(1.8V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)QG Typ @ VGS = 5V(nC)
DMN3016LFDEDMN3016LFDE.pdf-YesYesNNo302010-0.73-1216--20025.111.3-
Description

This MOSFET has been designed to minimize the on-state resistance

(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Application
  • Battery Management Application
  • Power Management Functions
  • DC-DC Converters
订购型号
  • DMN3016LFDE-13
  • DMN3016LFDE-7
U-DFN2020-6 (Type E)
DMN3016LFDE.pdf DMN3016LFDE
DMP2066UFDE 20v p-channel enhancement mode mosfet DMP2066UFDE