DMN3029LFG：N 通道 30V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) | QG Typ @ VGS = 5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN3029LFG | DMN3029LFG.pdf | DMN3029LFG | Yes | Yes | N | No | 30 | 25 | 9.5 | - | 1 | - | 18.6 | 26.5 | - | - | 1.8 | 0 | 0 | 11.3 | 5.3 | - |
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- Backlighting
- DC-DC Converters
- Power management functions
PowerDI3333-8
- DMN3029LFG.pdf DMN3029LFG
