DMN3032LFDBQ：N 通道 30V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) | QG Typ @ VGS = 5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN3032LFDBQ | DMN3032LFDBQ.pdf | DMN3032LFDBQ | Yes | Yes | N+N | No | 30 | 20 | - | 6.2 | - | 1.7 | 30 | 42 | - | - | 2 | 500 | 15 | 10.6 | 5 | - |
Description
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.
Application
- Body Control Electronics
- Power Management Functions
- DC-DC Converters
Features
- 100% Unclamped Inductive Switching – Ensures More Reliable and Robust Application
- Low On-Resistance – Minimizes Power Losses
- Low Gate Charge – Minimizes Switching Losses
- Small Form Factor Low Profile Package – Increased Power Density
订购型号
- DMN3032LFDBQ-7
U-DFN2020-6 (Type B)
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- DMN3032LFDBQ.pdf DMN3032LFDBQ
