DMN33D8L:N 通道 30V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)IDS @TC = +25°C (A)PD @TA = +25°C (W)PD @TC = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)RDS(ON)Max @ VGS(1.8V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)QG Typ @ VGS = 5V(nC)
DMN33D8LDMN33D8L.pdf-YesYesNYes-200.35---30003800 @ 5V--1.5-00.55--
Description

This new generation 30V N Channel enhancement mode MOSFET has been designed to minimise RDS(ON) and yet maintain superior switching performance. 

订购型号
  • DMN33D8LDW-7
SOT23
DMN33D8L.pdf DMN33D8L