DMN63D8L:N 通道 30V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)IDS @TC = +25°C (A)PD @TA = +25°C (W)PD @TC = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)RDS(ON)Max @ VGS(1.8V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)QG Typ @ VGS = 5V(nC)
DMN63D8LDMN63D8L.pdfDMN63D8LYesNoNYes3020.35-.52-2800420013000-1.52225-.43-
Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application
  • Motor Control
  • Power Management Functions
  • Backlighting
Features
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Gate
订购型号
  • DMN63D8L-7
  • DMN63D8LDW-7
  • DMN63D8LDWQ-7
  • DMN63D8LV-7
  • DMN63D8LW-13
  • DMN63D8LW-7
SOT23
DMN63D8L.pdf DMN63D8L