DMN63D8LDW:N 通道 30V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)IDS @TC = +25°C (A)PD @TA = +25°C (W)PD @TC = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)RDS(ON)Max @ VGS(1.8V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)QG Typ @ VGS = 5V(nC)
DMN63D8LDWDMN63D8LDW.pdfDMN63D8LDWYesNoN+NYes30200.2-0.3-28004200--1.5000.870.43-
Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application
  • DC-DC Converters
  • Power management functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc
订购型号
  • DMN63D8LDW-7
  • DMN63D8LDWQ-7
SOT363
DMN63D8LDW.pdf DMN63D8LDW