Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
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DMNH10H028SPSQ | DMNH10H028SPSQ.pdf | DMNH10H028SPSQ | Yes | Yes | N | No | 100 | 20 | - | 63 | - | 166 | 28 | - | - | 4 | 2245 | 50 | 36 | - |
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.