DMPH3010LK3：P Channel 30V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ @ VGS = 4.5V(nC) | QG Typ@ VGS = 10V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMPH3010LK3 | DMPH3010LK3.pdf | DMPH3010LK3 | Yes | No | P | No | 30 | 20 | 16 | 3.9 | 7.5 | 10 | 2.1 | 6807 | 15 | 66 | 139 |
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- DC-DC Converters
- Power Management Functions
- Reverse Polarity Protection
Features
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switch (UIS) Test in Production
- Low On-resistance
- Fast Switching Speed
TO252 (DPAK)
- DMPH3010LK3.pdf DMPH3010LK3
