DMPH6050SPD：P 通道 31V - 99V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ@ VGS = -10V(nC) | QG Typ @ VGS = 4.5V(nC) | QG Typ@ VGS = -4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMPH6050SPD | DMPH6050SPD.pdf | DMPH6050SPD | Yes | No | P | 60 | 20 | 5.2 | 2 | 48 | 60 | - | 3 | 30 | - | 30.6 | - | 14.5 |
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Application
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Features
- Rated to +175°C – ideal for high ambient temperature environments
- 100% Unclamped Inductive Switching – ensures more reliable and robust end application
- Low RDS(ON) – minimises power losses
- Low Qg – minimises switching losses
PowerDI5060-8 (Type C)
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- DMPH6050SPD.pdf DMPH6050SPD
