DMT10H010LK3：N 通道 ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMT10H010LK3 | DMT10H010LK3.pdf | DMT10H010LK3 | No | No | N | No | 100 | 20 | - | 68.8 | 3 | 62.5 | 8.8 | - | - | 3 | 2592 | 50 | 53.7 | - |
Description
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Application
- Power Management Functions
- DC-DC Converters
- Backlighting
Features
- 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
- Low RDS(ON) – Minimises Power Losses
- Low QG – Minimises Switching Losses
TO252 (DPAK)
- DMT10H010LK3.pdf DMT10H010LK3
