DMT10H010LSS：N 通道 ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMT10H010LSS | DMT10H010LSS.pdf | DMT10H010LSS | Yes | No | N | No | 100 | 20 | 11.5 | 29.5 | 1.9 | - | 9.5 | 14.5 | - | 2.8 | 2592 | 50 | 53.7 | - |
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- Power Management Function
- AC-DC Secondary Retifier
- LED Boost
- Chargers
- Power Supplies
- Notebooks
- Adapters
- Communications
Features
- Low On-Resistance
- Fast Switching Speed
- Low Threshold
- Low Gate Drive
- Low Input Capacitance
订购型号
- DMT10H010LSS-13
SO-8
- DMT10H010LSS.pdf DMT10H010LSS
