DMT10H014LSS:N 通道 ≥100V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)IDS @TC = +25°C (A)PD @TA = +25°C (W)PD @TC = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)
DMT10H014LSSDMT10H014LSS.pdfDMT10H014LSSYesNoNNo100208.9-1.2751425-318715033.3-
Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior swtching performance. This device is ideal for use in notebook battery power management and loadswitch.

Application
  • Backlighting
  • Power Management Functions
  • DC-DC Converters
Features
  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
SO-8
DMT10H014LSS.pdf DMT10H014LSS