DMT10H015LCG：N 通道 ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMT10H015LCG | DMT10H015LCG.pdf | DMT10H015LCG | No | No | N | No | 100 | 20 | 9.4 | 34 | 2.1 | - | 15 | 26 | - | 3.5 | 1871 | 50 | 33.3 | - |
Description
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.
Application
- Backlighting
- Power Management Functions
- DC-DC Converters
Features
- 100% Unclamped Inductive Switch (UIS) Test in Production
- High Conversion Efficiency
- Low RDS(ON) – Minimizes On-State Losses
- Low Input Capacitance
- Fast Switching Speed
V-DFN3333-8
- DMT10H015LCG.pdf DMT10H015LCG
