DMT10H015LK3:N 通道 ≥100V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)IDS @TC = +25°C (A)PD @TA = +25°C (W)PD @TC = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)
DMT10H015LK3DMT10H015LK3.pdfDMT10H015LK3YesNoNNo10020-502.9-14--3.518715033.3-
Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Application
  • Power Management Functions
  • DC-DC Converters
  • Backlighting
Features
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Minimises Power Losses
  • Low QG – Minimises Switching Losses
TO252 (DPAK)
DMT10H015LK3.pdf DMT10H015LK3